Effects of flexoelectricity and strain gradient on bending vibration characteristics of piezoelectric semiconductor nanowires

نویسندگان

چکیده

In this paper, the governing equation of a piezoelectric semiconductor (PSC) is derived after consideration flexoelectricity and strain gradient effect. A one-dimensional first-order beam model obtained through integration across its section. Based on model, theoretical analysis carried out for cantilever PSC nanowire subjected to time-harmonic transverse shear force. The effects bending vibration characteristics are investigated, including natural frequencies distributions physical quantities. results show that effect frequency stiffness greater than flexoelectricity, while with regard influence electric potential carrier concentration, reverse true. Our findings shed light design optimization devices such as energy harvesters at nanoscale.

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ژورنال

عنوان ژورنال: Journal of Applied Physics

سال: 2021

ISSN: ['1089-7550', '0021-8979', '1520-8850']

DOI: https://doi.org/10.1063/5.0038782